IGBT модул
SK50DM060D/L3
Power Bipolar Transistor, 50A I(C), 2-Element, NPN, Silicon, Plastic/Epoxy, 7 Pin
| Case Connection | ISOLATED |
| Collector Current-Max (IC) | 50.0 A |
| Configuration | COMPLEX |
| DC Current Gain-Min (hFE) | 100.0 |
| Fall Time-Max (tf) | 3000.0 ns |
| JESD-30 Code | R-PUFM-X7 |
| Number of Elements | 2.0 |
| Number of Terminals | 7 |
| Operating Temperature-Max | 150.0 Cel |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | NPN |
| Power Dissipation Ambient-Max | 620.0 W |
| Power Dissipation-Max (Abs) | 310.0 W |
| Qualification Status | Not Qualified |
| Sub Category | BIP General Purpose Power |
| Surface Mount | NO |
| Terminal Form | UNSPECIFIED |
| Terminal Position | UPPER |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 15000.0 ns |
| Turn-on Time-Max (ton) | 1500.0 ns |
| VCEsat-Max | 2.0 V |
